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| LAB MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6 SEME BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES FEATURES * HERMETIC METAL OR CERAMIC PACKAGES 1.0 123 1 3 .7 0 * HIGH RELIABILITY * MILITARY AND SPACE OPTIONS * SCREENING TO CECC LEVELS 2 .5 4 BSC 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 2. 70 BSC 3 .6 0 (0 .1 4 2 ) M ax. * FULLY ISOLATED (METAL VERSION) 1 3 0 .7 6 (0 .0 3 0 ) m in . 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) APPLICATIONS * POWER LINEAR AND SWITCHING APPLICATIONS * GENERAL PURPOSE POWER 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) TO220M - TO220 Metal Package - Isolated SMD1 - Ceramic Surface Mount Package Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter ABSOLUTE MAXIMUM RATINGS (Tcase=25C unless otherwise stated) BDS10 VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Semelab plc. Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0) Emitter - Base voltage (IC = 0) Emitter , Collector current Base current Total power dissipation at Tcase 75C Storage Temperature Junction Temperature 60V 60V BDS11 BDS12 80V 100V 80V 100V 5V 15A 5A 90W -65 to 200C 200C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 LAB Parameter ICBO Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) SEME BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Test Conditions BDS10 BDS11 BDS12 BDS10 BDS11 BDS12 VEB = 5V VCB = 60V VCB = 80V VCB = 100V VCE = 30V VCE = 40V VCE = 50V Min. Typ. Max. 500 500 500 1 1 1 1 Unit mA ICEO mA IEBO mA VCEO(sus)* VCE(sat)* VBE(sat)* VBE* hFE* fT BDS10 Collector - Emitter BDS11 sustaining voltage (IB = 0) BDS12 Collector - Emitter IC = 5A saturation voltage IC = 10A Base - Emitter IC = 10A saturation voltage Base - Emitter voltage IC = 5A IC = 0.5A DC Current gain IC = 5A IC = 10A Transition frequency IC = 0.5A IC = 100mA IB = 0.5A IB = 2.5A IB = 2.5A VCE = 4V VCE = 4V VCE = 4V VCE = 4V VCE = 4V 60 80 100 1 3 2.5 1.5 250 150 V V V V 40 15 5 3 MHz *Pulsed : Pulse duration = 300 ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS Parameter ton ts tr On Time Storage Time Fall Time (td + tr) Test Conditions IC = 4A VCC = 30V IB1 = 0.4A IC = 4A VCC = 30V IB1 = -IB2 = 0.4A Max. 0.7 1.0 0.8 Unit ms ms ms THERMAL DATA RTHj-case RTHcase-sink RTHj-a Thermal resistance junction - case Thermal resistance case - heatsink ** Thermal resistance junction - ambient Max. 1.4C/W Typ. 1.0C/W Max. 80C/W ** Smooth flat surface using thermal grease. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 |
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